Programmable voltage divider and method for testing the impedance of a programmable element

ABSTRACT

A programmable voltage divider has normal and test modes of operation. The divider includes first and second supply nodes, a divider node that provides a data value, and a first divider element that is coupled between the first supply node and the divider node. The divider also includes a controlled node, a second divider element that has a selectable resistivity and that is coupled between the divider node and the controlled node, and a test circuit that is coupled between the controlled node and the second supply node. During the normal mode of operation, the first and second divider elements generate the data value having a first logic level when the second divider element has a first resistivity, and generate the data value having a second logic level when the second divider element has a second resistivity. The test circuit generates a first voltage at the controlled node during the normal mode of operation, and generates a second voltage at the controlled node during the test mode of operation. The test circuit may generate the first and second voltages by varying its impedance, or by switching in and out one or more fixed voltages.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Pat. application Ser. No. 09/318,571, filed May 26, 1999, and issued as U.S. Pat. No. 6,178,128 on Jan. 23, 2001, which is a divisional of pending U.S. patent application Ser. No. 08/813,063, filed Mar. 7, 1997, and issued as U.S. Pat. No. 5,952,833 on Sep. 14, 1999.

The following U.S. patent applications entitled: “An Efficient Method of Determining Acceptable Resistance of a Blown Fuse,” U.S. application Ser. No. 08/813,525, filed Mar. 7, 1997 and issued as U.S. Pat. No. 6,185,705 on Feb. 6, 2001, and “Method and Apparatus for Checking the Resistance of Antifuses,” U.S. application Ser. No. 08/813,767, filed Mar. 7, 1997 and issued as U.S. Pat. No. 5,982,656 on Nov. 9, 1999, are related to the present application.

TECHNICAL FIELD

The present invention relates generally to electronic circuits, and more specifically to a programmable circuit that allows one to test the impedance of a programmable element, such as a fuse, during a test mode, and to a method for performing such a test.

BACKGROUND OF THE INVENTION

Many of today's integrated circuits, such as memory circuits, are programmable to operate in one or more particular modes, or to have one or more particular circuit configurations. An example of the latter type of circuit is a memory that includes redundant memory columns for replacing defective array memory columns. When a circuit tester discovers a defective array column, it programs the memory such that when an external device addresses the defective column, data is routed to a selected redundant column in a manner that is transparent to the external device. Typically, the manufacturer programs such integrated circuits at the factory before shipping them to customers.

These integrated circuits each typically include a bank of nonvolatile, programmable memory elements that the manufacturer programs to set a circuit in the desired operational mode or circuit configuration. Examples of such elements include electrically erasable and programmable read-only memory (EEPROM) cells, fuses, and antifuses. An integrated circuit often incorporates into its programmable bank the type of programmable element that is the most similar to other elements or components of the circuit. For example, a Flash-EEPROM device often includes a bank of EEPROM cells, but a dynamic random access memory (DRAM) often includes a bank of antifuses, which are similar in structure to the DRAM storage capacitors. Furthermore, such a programmable element typically has a first impedance in an unprogrammed state, and a second, different impedance in a programmed state. For example, an antifise has a high impedance in an unprogrammed state, and thus is essentially an open circuit, and has a low impedance in a programmed state, and thus is essentially a short circuit. Conversely, a fuse is essentially a short circuit in an unprogrammed state, and is essentially an open circuit in a programmed state.

But because a programmed element may not always have an impedance that is within a desired range, the manufacturer often measures the impedances of the programmed elements in an analog fashion after it finishes programming the entire programmable bank. The analog tester performs these measurements sequentially by placing a voltage across each programmed element and measuring the current therethrough. If the manufacture discovers a programmed element that does not have the desired impedance, it can reprogram the element one or more times until it has the desired impedance.

A problem with this analog testing technique is that it often takes too long for high-density integrated circuits. As the number of circuit components in an integrated circuit increases, so does the number of operational modes and circuit configurations that the circuit supports. Therefore, the number of programmable elements in the programmable bank also increases to accommodate the additional operational modes and circuit configurations. For example, a 4 megabit DRAM may have 20 antifuses in its programmable bank, but a 64 megabit DRAM may have 640 antifuses. Furthermore, measuring the impedance in an analog fashion is relatively slow because of the parasitic capacitances associated with the test path and each programmed element. Thus, increasing the storage capacity of a DRAM by a factor of 16 can potentially increase the number of antifuses, and thus the already lengthy testing time, by a factor of 32. Additionally, testers that can perform analog measurements are often expensive and complicated to operate in the analog-testing mode.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a programmable voltage divider has normal and test modes of operation. The divider includes first and second supply nodes, a divider node that provides a data value, and a first divider element that is coupled between the first supply node and the divider node. The divider also includes a controlled node, a second divider element that has a selectable resistivity and that is coupled between the divider node and the controlled node, and a test circuit that is coupled between the controlled node and the second supply node. The test circuit generates a voltage at the controlled node during the normal mode of operation, and varies this voltage during the test mode of operation.

In a related aspect of the present invention, the test circuit includes a first switch coupled between the controlled node and the second supply node and a series combination of a second switch and a voltage source, the series combination coupled in parallel with the first switch. During the test mode, the test circuit opens the first switch and closes the second switch.

In another related aspect of the invention, the test circuit includes a first switch coupled between the controlled node and the second supply node, and a series combination of a second switch and an impedance element, the series combination coupled in parallel with the first switch. During the test mode, the test circuit opens the first switch and closes the second switch.

In yet another related aspect of the invention, the test circuit includes a first switch coupled between the controlled node and the second supply node, and a diode coupled in parallel with the first switch. During the test mode, the test circuit opens the first switch.

An advantage of the present invention is that it allows faster testing of programmable elements as compared with the prior art. Another advantage is that the present invention allows digital testing of programmable elements instead of analog testing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a programmable bank according to a first embodiment of the invention.

FIG. 2 is a schematic diagram of a programmable bank according to a second embodiment of the invention.

FIG. 3 is a schematic diagram of a first alternative embodiment of the test circuit of FIG. 2.

FIG. 4 is a schematic diagram of a second alternative embodiment of the test circuit of FIG. 2.

FIG. 5 is a schematic diagram of a programmable bank according to a third embodiment of the invention.

FIG. 6 is a schematic diagram of an alternative embodiment of the programmable elements of FIGS. 1, 2 and 5.

FIG. 7 is a schematic diagram of a programmable bank according to a fourth embodiment of the invention.

FIG. 8 is a schematic block diagram of a memory device that incorporates a programmable bank according to the present invention.

FIG. 9 is a schematic block diagram of a computer system that incorporates the memory device of FIG. 8.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 is a schematic diagram of a programmable bank 10 according to a first embodiment of the invention. The bank 10 includes individually programmable circuits 12 ₀-12 _(n), which generate binary reference signals P₀-P_(n) at respective output nodes 14 ₀-14 _(n). The actual logic levels of the signals P₀-P_(n) depend upon the states in which the circuits 12 ₀-12 _(n) are programmed. The integrated circuit (not shown in FIG. 1) that incorporates the bank 10 uses the signals P₀-P_(n) to select its operational modes or to configure its circuitry. The bank 10 also includes a test circuit 16, which allows the manufacturer to test the programmable circuits 12 ₀-12 _(n) in a digital manner, i.e., by merely reading the values P₀-P_(n). Thus, the manufacturer can test the bank 10 in a manner that is both faster and easier than prior testing techniques. Furthermore, the bank 10 may support conventional analog testing as well as the inventive digital testing. The bank 10 is discussed below in greater detail with specific reference to the programmable circuit 120, which is similar in structure and operation to the other programmable circuits 12 ₁-12 _(n).

The programmable circuit 12 ₀ includes a programmable element 18 ₀, which is an antifuse in this first embodiment of the invention. A first node of the antifuse 18 ₀ is coupled to a test node 20, which is common to the first nodes of all the antifuses 18 ₀-18 _(n). A second node is coupled to an isolation device 19 ₀, which limits the voltage across the antifuses 18 ₀ during normal operation of the bank 10. In one aspect of the invention, the device 19 is an NMOS transistor, which has its gate coupled to a voltage V₁ during normal operation of the bank 10, and to 0 V, ie., ground, during programming of the bank 10.

The circuit 12 ₀ also includes a latch/pull-up Circuit 22 ₀, which generates the signal P₀ in response to the state of the antifuses 18 ₀. The circuit 22 ₀ includes an inverter 24 ₀, which has an input terminal coupled to a reference node 25 ₀. The circuit 22 ₀ also includes a feedback switch 26 ₀, which together with the inverter 24 ₀ forms a latch 27 ₀, an impedance element, e.g., a pull-up or divider device 28 ₀, and an initialization switch 30 ₀, which allows the circuit 22 ₀ to generate the desired value for P₀ during the initial power-up of the integrated circuit that incorporates the bank 10. In one aspect of the invention, the feedback switch 26 ₀ and the initialization switch 30 ₀ are PMOS transistors, and the pull-up device 28 ₀ is a controlled-current, i.e., long-channel, PMOS transistor. An advantage of the circuit 22 ₀ is that after the initialization pulse is removed, the circuit 12 ₀ draws no quiescent supply current regardless of whether the antifuse 18 ₀ is programmed or unprogrammed.

In addition to the circuits 12 ₀-12 _(n), the programmable bank 10 also includes programming/analog-testing circuitry 32, which is coupled across each of the antifuses 18 ₀-18 _(n). The programming circuitry 32 includes a program/test circuit 34, which provides a programming voltage at the common node 20 to program selected ones of the antifuses 18 ₀-18 _(n). A tester (not shown in FIG. 1) can be coupled to the common node 20 to provide a test voltage and measure the resultant test current to determine the impedances of the antifuses 18 ₀-18 _(n) in an analog fashion. A program/decoder 36 couples to ground the first node of an antifuse 18 that is selected for either programming or analog testing.

The bank 10 further includes a bank-mode circuit 37, which includes the test circuit 16, a normal-mode switch 38, and a conventional mode-control circuit 44. The switch 38 couples the common node 20 to ground during normal operation of the bank 10. The test circuit 16 includes a switch 40 that couples the test node to ground through an impedance element 42 in a test mode during digital testing of the bank 10. The mode-control circuit 44 controls the switch 38 and the switch 40 of the test circuit 16. In one embodiment of the invention, the switches 38 and 40 are NMOS transistors, and the impedance element 42 is a resistor. In other embodiments of the invention, the impedance element 42 can be a long-channel PMOS transistor or any other conventional impedance device.

Still referring to FIG. 1, in operation during programming of the antifuse 18 ₀, the gate of the isolation transistor 19 ₀ is coupled to ground such that the transistor 19 ₀ is inactive, and thus electrically isolates the antifuse 18 ₀ from the latch/pull-up circuit 22 ₀. The decoder 36 couples the first node of the antifuse 18 ₀ to ground. The program/test circuit 34 then provides on the common node 20 a programming voltage that programs or “blows” the antifuse 18 ₀, i.e., significantly lowers the impedance between its first and second nodes. In one aspect of the invention, the programming voltage is between 7 V and 9 V. Once programmed, the antifuse 18 ₀ should be essentially a short circuit.

During optional and conventional analog testing of the programmed antifuses 18 ₀, the program/test circuit 34 provides a test voltage on the common node 20, and a conventional tester (not shown in FIG. 1) measures the current through the antifuse 18 ₀. If the measured impedance is less than a desired maximum impedance, the antifuses 18 ₀ passes the test and is deemed to have been properly programmed. In one aspect of the invention, the desired maximum impedance is 300 ohms.

During normal operation, the program/test circuit 34 is inactive, and the decoder 36 uncouples the antifise 18 ₀ from ground. Furthermore, the gate of the isolation transistor 19 ₀ is coupled to the voltage V₁, which in one embodiment of the invention, is approximately Vcc/2. Thus, if Vcc=5V, V₁=2.5V. In normal operation, the mode-control circuit 44 also turns off the transistor 40 to deactivate the test circuit 16, and turns. on the switch 38, which couples the common node 20 to ground. An initialization pulse then activates the switch 30 ₀ for a time sufficient to set the latch 27 ₀, which generates P₀ equal to logic 1 if the antifuses 18 ₀ is programmed, or generates P₀ equal to logic 0 if the antifuses 18 ₀ is unprogrammed. Specifically, during normal operation when the initialization pulse is present and the antifuses 18 ₀ is programmed to have a low impedance, a relatively large current flows through the switch 30 ₀, the pull-up device 28 ₀, the active isolation transistor 19 ₀, and the antifuse 18 ₀. The programmable circuit 12 ₀, acts as a voltage divider and generates a reference voltage at the reference node 25 ₀. Because the antifuses 18 ₀ has a relatively low impedance, which is typically no more that a few hundred ohms, the reference voltage is low enough to represent a logic 0, and thus the inverter 24 ₀ generates P₀ equal to logic 1. The logic 1 at the output 14 ₀ of the inverter 24 ₀ turns off the feedback switch 26 ₀. After the initialization pulse is removed, the inactive feedback switch 26 ₀ reinforces the logic 0 at the input of the latch 24 ₀ so that the signal P₀ remains equal to logic 1.

During normal operation when the initialization pulse is present and the antifuse 18 ₀ is unprogrammed to have a high impedance, little or no current flows through the switch 30 ₀, the pull-up device 28 ₀, the isolation transistor 19 ₀, and the antifuses 18 ₀. Thus, the device 28 ₀ pulls up the reference voltage at the node 25 ₀ to approximately Vcc, which is high enough to represent a logic 1, and the inverter 24 ₀ generates P₀ equal to logic 0, which turns on the feedback switch 26 ₀. After the initialization pulse is removed, the active feedback switch 26 ₀ reinforces the logic 1 at the input of the latch 24 ₀ so that the signal P₀ remains equal to logic 0. Furthermore, the isolation transistor 19 ₀ maintains the voltage at the first node of the antifuses 18 ₀, at one threshold voltage below V₁, which as stated above is approximately Vcc/2 in one aspect of the invention. Thus, the transistor 19 ₀ insures that during normal operation, the voltage across the unprogrammed antifise 18 ₀ is too low to accidentally program it.

In operation during a digital test mode according to the first embodiment of the present invention, the programmed antifuses 18 ₀-18 _(n) are tested to make sure that they are properly programmed, i.e., that their resistance is less than a desired maximum value. After the antifuse 18 ₀ has been programmed, the programmed resistance of the antifuse 18 ₀ is tested. During testing, the circuit 12 ₀ operates in a manner similar to the normal operating mode described above, except that the mode-control circuit 44 shuts off the switch 38, and turns on the switch 40, thereby coupling the common node 20 to ground through the impedance element 42. The impedance element 42 effectively increases the impedance of the antifuse 18 ₀, i.e., increases the impedance of the lower leg of the voltage divider, and thus increases the reference voltage at the node 25 ₀. Therefore, if the circuit 12 ₀ generates P₀ equal to logic 1 when the impedance element 42 is coupled between the antifuses 18 ₀ and ground, then the manufacturer can be virtually certain that the circuit 12 ₀ will generate P₀ equal to logic 1 during normal operation when the active switch 38 couples the antifuse 18 ₀ directly to ground. Conversely, if during the digital test mode the circuit 12 ₀ generates P₀ equal to logic 0, then the manufacturer knows that the antifuse 18 ₀ is improperly programmed, or not programmed at all. At this point, one can instruct the programming circuitry 32 to reprogram the antifuse 18 ₀. Or, if the circuit 12 ₀ is expendable, it can be labeled as defective and not used.

For example, if the maximum desired impedance for the antifuse. 18 ₀ is 300 ohms, and 500 or more ohms between the node 25 ₀ and ground will cause the reference voltage to be equivalent to logic 1 instead of logic 0, then the impedance element 42 has a value of approximately 200 ohms. Thus, during the digital test mode, if the impedance of the antifuse 18 ₀ is greater than the maximum desired impedance of 300 ohms, the combined impedance between the node 25 ₀ and ground is greater than or equal to 500 ohms, and P₀ equals logic 0. Conversely, if the impedance of the antifise 18 ₀ is less than the maximum desired impedance, the combined impedance is less than 500 ohms, and P₀ equals logic 1.

In one embodiment of the invention, all of the signals P₀-Pare coupled to a multiplexer (not shown in FIG. 1), which provides a selected one of the signals to an external pin of the device in which the bank 10 is incorporated so that a tester can sequentially read the signals P₀-P_(n) without internally probing the device.

Thus, the digital test mode according to the first embodiment of the invention allows a manufacturer to use a tester that need only read digital values instead of measuring an impedance in an analog fashion. A tester that reads only digital values is often less expensive to purchase and operate than one that must measure analog values. Furthermore, such a tester is often easier to operate. Additionally, even a tester that supports both digital and analog testing is often easier and cheaper to operate in the digital mode.

Moreover, the digital technique is often faster than prior analog techniques. Specifically, in the digital test mode, all the antifuses 18 ₀-18 _(n) are connected so that the circuits 12 ₀-12 _(n) are operational. Thus, one need only switch a multiplexer or move a probe from one signal P to the next, with no delay other than the multiplexer switching or probe movement time, which are often relatively short. Conversely, in the prior analog testing, each antifuses 18 must be individually switched into the test circuit. Because of the parasitic capacitances and inductances associated with the antifuses 18 and the bank 10 in general, after switching each antifuse 18 into the test circuit, one must wait a relatively long settling time before measuring the current therethrough. Thus, the greater the number of programed antifuses 18 being tested, the more time the inventive digital technique will save over the prior analog technique.

FIG. 2 is a schematic diagram of a programmable bank 46 according to a second embodiment of the invention. The bank 46 is similar in structure and operation to the bank 10 of FIG. 1, except that in place of the impedance device 42, a test circuit 47 includes a voltage source 48, such as a battery, that generates a positive test voltage VT on the common node 20 during the digital test mode. The test voltage VT has the same affect as discussed above for the impedance 42 of FIG. 1 in that it boosts the reference voltage at the node 25 ₀, and thus effectively increases the impedance of the antifuse 18 ₀ during digital testing. In one embodiment of the invention, VT is between 0.7 V and 1.5 V.

FIG. 3 is a schematic diagram of a test circuit 49 according to a first alternative embodiment of the invention. Specifically, the test circuit 49 can be used in place of the test circuit 47 of FIG. 2. In the test circuit 49, the voltage source 48 is a forward-biased PN junction diode 50, which generates a positive test voltage of approximately 0.7 V during the digital test mode when the switch 38 of FIG. 2 is inactive.

FIG. 4 is a schematic diagram of a test circuit 51 according to a second alternative embodiment of the invention. The test circuit 51 is similar to the test circuit 49 of FIG. 3, except that it includes a diode-connected NMOS transistor 52 instead of a PN junction diode. In a related embodiment of the invention, the test circuit 51 may include a diode-connected bipolar NPN transistor (not shown in FIG. 4) instead of the NMOS transistor 52.

FIG. 5 is a schematic diagram of a programmable bank 54. according to a third embodiment of the invention. The bank 54 is similar to the bank 10 of FIG. 1 and the bank 46 of FIG. 2, except that programmable circuits 59 ₀ include programmable elements 56 ₀-56 _(n), and a test circuit 55 includes a voltage source 58, which generates a negative voltage −VT on the common node 20 during the digital test mode. In one aspect of the invention, the elements 56 ₀-56 _(n) are either laser-cutable fuses or electrically programmable fuses. Thus, unlike the antifuses 18 ₀-18 _(n) of FIGS. 1 and 2, the fuses 56 ₀-56 _(n) have a low impedance when unprogrammed, and have a high impedance when programmed. Because the fuses 56 ₀-56 _(n) are not antifuses, the programming circuitry 32 and the isolation transistors 19 of the banks 10 and 46 may be omitted. In this case, the fuses 56 ₀-56 _(n) are programmed using conventional means (not shown in FIG. 5) that are external to the device that incorporates the bank 54. Alternatively, if the fuses 56 ₀-56 _(n) are electrical fuses, then the bank 54 may include circuitry that is similar to the programming circuitry 32 of FIGS. 1 and 2. But for clarity, FIG. 5 includes no programming circuitry. Because the circuit 59 ₀ is similar in structure and operation to the circuits 59 ₁-59 _(n), the operation of the bank 54 is discussed below in greater detail with reference to the circuit 59 ₀ for clarity.

During optional conventional analog testing of the element 56 ₀, a technician uses an ohmmeter (both not shown in FIG. 5) to measure the impedance of the fuse 56 ₀.

During normal operation, the bank 54 operates as described above in conjunction with the bank 10 of FIG. 1 and the bank 46 of FIG. 2, except that the circuit 59 ₀ generates P₀ equal to logic 0 when the fuse 56 ₀ is programed, and generates P₀ equal to logic 1 when the fuse 56 ₀ is unprogrammed. Again, this is because in contrast to the antifuses 18 ₀-18 _(n) of FIGS. 1 and 2, the fuses 56 ₀-56 _(n) have a high impedance when programmed, and a low impedance when unprogrammed.

During a digital test mode, the programmed fuses 56 ₀-56 _(n) are tested to make sure that they are properly programmed, i.e., that their programmed resistance is greater than a desired minimum value. When the fuse 56 ₀ is programmed, the circuit 59 ₀ operates like it does during normal mode, except that the mode-control circuit 44 shuts off the switch 38, and turns on the transistor 40 to activate the test circuit 55 and couple the negative test voltage −V_(T) to the common node 20. −V_(T) effectively decreases the impedance of the fuse 56 ₀ and thus decreases the reference voltage at the node 61 ₀ as compared with normal operation. Therefore, if the circuit 59 ₀ generates P₀ equal to logic 0 when −V_(T) is on the common node 20, then the manufacturer can be virtually certain that the circuit 59 ₀ will generate P₀ equal to logic 0 during normal operation when the active switch 38 couples the common node 20 directly to ground. Conversely, if during the digital test mode the circuit 59 ₀ generates P₀ equal to logic 1, then the manufacturer knows that the fuse 56 ₀ is improperly programmed, or not programmed at all. At this point, the manufacturer can reprogram the fuse 56 ₀, or, if the circuit 59 ₀ is expendable, can label it as defective and not use it.

For example, using the conventional voltage-divider equation: $V_{r} = {\frac{R_{a}}{R_{a} + R_{b}} \times V}$

where V_(r) is the reference voltage at the node 61 ₀, if Vcc equals 5 V, the threshold between logic 1 and logic 0 is approximately 2.5 V, the impedance of the element 28 ₀ is 10 kilohm, and the desired minimum impedance of the fuse 56 ₀ is 40 kilohm, then −VT=−7.5 V. Thus, during the digital test mode, if the impedance of the fuse 56 ₀ is less than the desired minimum impedance, P₀ will equal logic 1. Conversely, if the impedance of the fuse 56 ₀ is greater than the desired minimum impedance, P₀ will equal logic 0.

As discussed above in conjunction with FIG. 1, all of the signals P₀-P_(n) may be coupled to a multiplexer (not shown in FIG. 5), which provides a selected one of the signals to an external pin of the device in which the bank 54 is incorporated so that a tester can sequentially read the signals P₀-P_(n).

FIG. 6 is a schematic diagram of nonvolatile programmable element 60 according to an alternative embodiment of the invention. The programmable element 60 is a EEPROM cell that includes a floating gate 62. In a conventionally defined unprogrammed state, there is no voltage stored on the floating gate 62, and thus the EEPROM cell 60 has a low impedance, i.e., acts as a closed circuit, when a voltage is applied to its gate. In a conventionally defined programmed state, a negative voltage is stored on the floating gate 62, and thus the EEPROM cell 60 has a high impedance, i.e., acts as an open circuit, when a voltage is applied to its gate. Thus, the EEPROM cell 60 is similar to the fuse elements 56 ₀-56 _(n) of FIG. 5, and in one aspect of the invention may be used in place of these fuse elements in the bank 54.

Still referring to FIG. 6, one can unconventionally define the unprogrammed state as when the floating gate 62 has a negative voltage stored thereon, and the programmed state as when there is no voltage stored on the floating gate 62. Using this unconventional definition, the EEPROM cell 60 resembles the antifuses 18 ₀-18 _(n) of FIG. 1. Thus, in an aspect of the invention using these unconventional definitions of the programmed and unprogrammed states, EEPROM cells like the cell 60 may be used in place of the antifuse elements 18 ₀-18 _(n) in the bank 10 of FIG. 1. If, however, one decides to use this unconventional technique, he has to first “unprogram” all of the cells 60 by storing negative voltages on the floating gates 62 thereof.

FIG. 7 is a schematic block diagram of a programmable bank 64 according to a fourth embodiment of the invention. The bank 64 allows simultaneous digital testing of more than one programmable circuit 66 ₀-66 ₃ at a time. Although the four circuits 66 ₀-66 ₃ are shown here for clarity, the bank 64 may include more or less of these circuits. Furthermore, in one aspect of the invention, the programmable circuits 66 ₀-66 ₃ incorporate antifuses (not shown in FIG. 7), and are thus similar to the circuits 12 ₀-12 _(n) of FIGS. 1 and 2.

The bank 64 includes a program/test decoder circuit 68, which selects the circuits 66 ₀-66 ₃ that are to be programmed during a programming mode or are to be tested during a conventional test mode. A test circuit 70, which is coupled between a node 71 and ground, generates a test voltage or provides a test impedance during a digital test mode. The test circuit 70 may be similar to the test circuits 16 or 47 of FIGS. 1 and 2. A normal-mode switch 78 couples the node 71 to ground during normal operation of the bank 64. A program/test circuit 72 provides a programming voltage during programming of the circuits 66 ₀-66 ₃, and provides a test voltage during the conventional test mode. In one aspect of the invention, the circuit 72 is a conductive pad to which an external test circuit (not shown in FIG. 7) provides the described programming and test voltages. A normal-mode/digital-test-mode switch 74 couples a node 76 that is common to the circuits 66 ₀-66 ₃ to the node 71 during normal operation and during the digital test mode. A program-mode/conventional-test-mode switch 75 couples the common node 76 to the program/test circuit 72 during programming or conventional testing of the bank 64. A logic circuit 79 receives the output signals P₀-P₂ of the circuits 66 ₀-66 ₂, and logically combines them to generate resultant output signals L₀-L₇. A multiplexer 80 provides a selected one of the signals L₀-L₇ and P₃ to an external terminal of the device incorporating the bank 64 during the digital test mode. A mode-control circuit 81 controls the operation of the switches 74, 75, and 78, and the test circuit 70.

During the programming of the circuits 66 ₀-66 ₃, the decoder 68 receives address signals at its address inputs and couples the selected one of the circuits 66 ₀-66 ₃ to ground through a switching network 69. The switch 75 is active, and thus couples the common node 76 to the program/test circuit 72. Thus, in a manner similar to that described above in conjunction with FIG. 1, the circuit 72 generates a program voltage and thus programs those of the circuits 66 ₀-66 ₃ that the decoder 68 selects for programming

During the conventional test mode, the circuit 72 generates a test voltage, and external test circuitry measures the current flowing through the circuit 66 under test to determine the resistance of the programmable element therein and whether or not it has a desired value.

During normal operation, the decoder 68 deactivates the switching network 69, the switches 74 and 78 are active, and the switch 75 is inactive. The bank 64 thus operates similarly to the banks 10 and 46, except that the signals P₀-P₂ are not considered separately, but are considered as a predetermined logical combination. For example, the logic circuit 79 may generate a selected one of the signals L₀-L₇ equal to logic 1, and the remainder of these signals equal to logic 0, where each one of the eight possible combinations of the three signals P₀-P₂ selects a different one of the signals L₀-L₇ to equal logic 1. Thus, P₀-P₂ may be used together to select one of eight operational modes or circuit configurations.

During the digital test mode of operation according to the present invention, the tester can test the bank 64 more quickly by reading the appropriate one of the signals L₀-L₇ instead of reading all of the signals P₀-P₂ individually. Specifically, the decoder 68 disables all of the transistors in the switching network 69. The switch 74 is active, and the switches 75 and 78 are inactive so that the test circuit 70 can generate a test voltage or provide a test impedance at the common node 76. The digital testing then proceeds as discussed above in conjunction with FIG. 1. But instead of reading the signals P₀-P₂ individually, the tester reads the one of the signals L₀-L₇ that corresponds to the correct programmed combination of P₀-P₂. For example, if the circuits 66 ₀-66 ₂ are programmed to generate the signals P₀-P₂ equal to logic 1, logic 0, and logic 1, respectively, and this sequence of values causes the logic circuit 79 to generate L₅ equal to logic 1, and L₀-L₄ and L₆-L₇ equal to logic 0, then the tester conventionally controls the multiplexer 80 to couple L₅ to the external read pin. If L₅ equals logic 1, then the tester, with just this one reading, determines that all of the circuits 66 ₀-66 ₂ are properly programmed. By effectively testing more than one of the circuits 66 ₀-66 ₃ simultaneously, the testing time can be significantly reduced as compared with reading the signals P₀-P₃ sequentially. In another aspect of the invention, the multiplexer 80 may be omitted, and the tester can directly probe the outputs of the logic gate L.

FIG. 8 is a schematic block diagram of a memory device 90, which incorporates a programmable bank 92 according to the present invention. The programmable bank 92 may be similar to one of the banks 10, 46, 54 or 64 of FIGS. 1, 2, 5 and 7, respectively. In one embodiment, the memory device 90 is a synchronous dynamic random access memory (SDRAM), although the inventive programmable bank 92 may be used in other types of memories, and in integrated circuits other than memories, such as microprocessors.

In addition to the programmable bank 92, the memory device 90 includes an address register 94, which receives an address from an address bus ADDRESS. A control logic circuit 96 receives CLK and COMMAND signals, receives the programmed signals P from the programmable bank 92, and communicates with and controls the other elements of the memory device 90.

A row-address multiplexer 98 receives the address signal from an address register 94, and provides the row address to row-address latch-and-decode circuits 100 a and 100 b. During read and write cycles, the row-address latch-and-decode circuits 100 a and 100 b activate the word lines of the addressed rows of memory cells in memory banks 102 a and 102 b, respectively. Read/write circuits 104 a and 104 b, respectively, read data from the addressed memory cells in the memory banks 102 a and 102 b during a read cycle, and respectively write data to the addressed memory cells during a write cycle. A column-address latch-and-decode circuit 106 receives the address from the address register 94 and provides the column address of the selected memory cells to the read/write circuits 104 a and 104 b. For clarity, the address register 94, the row-address multiplexer 98, the row-address latch-and-decode circuits 100 a and 100 b, and the column-address latch-and-decode circuit 106 can be collectively referred to as the address decoder.

A data input/output (I/O) circuit 108 includes a plurality of input buffers 110. During a write cycle, the buffers 110 receive and store data from the DATA bus, and the read/write circuits 104 a and 104 b, respectively, provide this stored data to the memory banks 102 a and 102 b. The data I/O circuit 108 also includes a plurality of output drivers 112. During a read cycle, the read/write circuits 104 a and 104 b respectively provide data from the memory banks 102 a and 102 b to the drivers 112, which in turn provide this data to the DATA bus.

The memory device 90 may also include an optional charge pump 114, which steps up the power-supply voltage V_(DD) to a voltage V_(DDP). In one aspect of the invention, the pump 114 generates V_(DDP) approximately 1 V to 1.5 V higher than V_(DD). The memory device 90 may use V_(DDP) to overdrive selected internal transistors in a conventional manner.

In operation, if the memory device 90 is a SDRAM, then all of the input signals and output signals, as well as many of the internal signals, are synchronized to the CLK signal. The control logic 96, in response to the programmed values P from the programmable bank 92, controls the operational modes of the memory device 90 in accordance with these values. Additionally, the control logic 96 may also configure various circuits on the memory device 90 in response to the programmed values P. For example, redundant memory elements may be programmed to be responsive to addresses of defective elements such as rows or columns of memory bits.

Alternatively, the programmable bank 92 may be coupled directly to these configurable circuits, and thus supply the signals P directly thereto.

FIG. 9 is a schematic block diagram of a computer system 120, which incorporates the memory 90 of FIG. 8. The computer system 120 includes computer circuitry 124 for performing computer functions, such as executing software to perform desired calculations and tasks. The computer circuitry 124 typically includes a processor 125 and the memory device 90, which is coupled to the processor 125. One or more input devices 126, such as a keypad or a mouse, are coupled to the computer circuitry 124 and allow an operator (not shown) to manually input data thereto. One or more output devices 128 are coupled to the computer circuitry 124 to provide the operator with the data generated by the computer circuitry 124. Examples of such output devices 128 include a printer and a video display unit. One or more data-storage devices 130 are coupled to the computer circuitry 124 to store data on or retrieve data from external storage media (not shown). Examples of the storage devices 133 and the corresponding storage media include drives that accept hard and floppy disks, tape cassettes, and compact disk read-only memories (CD-ROMs). Typically, the computer circuitry 124 includes address, data, and command busses and a clock line that are respectively coupled to the ADDRESS, DATA, and COMMAND busses and the CLK line of the memory device 90.

From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims. 

What is claimed is:
 1. A semiconductor device, comprising: a circuit including a programmable voltage divider having normal and test modes of operation, the programmable voltage divider comprising: first and second supply nodes; a divider node operable to provide a data value; a first divider element coupled between said first supply node and said divider node; a controlled node; a second divider element coupled between said divider node and said controlled node, said second divider element having a selectable resistivity; and a test circuit coupled between said controlled node and said second supply node, said test circuit operable to generate a voltage at said controlled node during said normal mode of operation and to vary said voltage during said test mode of operation.
 2. The semiconductor device of claim 1 wherein: said test circuit increases said voltage at said controlled node during said test mode; and said first and second divider elements are operable during said test mode to generate said data value having a first logic level when said second divider element has a resistivity that is less than or equal to a desired maximum value and to generate said data value having a second logic level when said second divider element has a resistivity that is greater than said desired maximum value.
 3. The semiconductor device of claim 1 wherein: said test circuit decreases said voltage at said controlled node during said test mode; and said first and second divider elements are operable during said test mode to generate said data value having a first logic level when said second divider element has a resistivity that is greater than or equal to a desired minimum value and to generate said data value having a second logic level when said second divider element has a resistivity that is less than said desired minimum value.
 4. The semiconductor device of claim 1, further comprising a storage circuit that is coupled to said divider node and that is operable to store said data value.
 5. The semiconductor device of claim 1 wherein said test circuit comprises: a first switch coupled between said controlled node and said second supply node; a series combination of a second switch and a voltage source, said series combination coupled in parallel with said first switch; and said test circuit operable during said test mode to open said first switch and to close said second switch.
 6. The semiconductor device of claim 1 wherein said test circuit comprises: a first switch coupled between said controlled node and said second supply node; a series combination of a second switch and an impedance element, said series combination coupled in parallel with said first switch; and said test circuit operable during said test mode to open said first switch and to close said second switch.
 7. The semiconductor device of claim 1 wherein said test circuit comprises: a first switch coupled between said controlled node and said second supply node; a diode coupled in series with a second switch, the series combination of said second switch and said diode coupled parallel with said first switch; and said test circuit operable during said test mode to open said first switch.
 8. The semiconductor device of claim 1 wherein the semiconductor device comprises a memory device.
 9. The semiconductor device of claim 1 wherein the semiconductor device comprises an electrically erasable and programmable read-only memory device.
 10. The semiconductor device of claim 1 wherein the semiconductor device comprises a dynamic random access memory device.
 11. The semiconductor device of claim 1 wherein the semiconductor device comprises a synchronous dynamic random access memory device.
 12. The semiconductor device of claim 1 wherein the semiconductor device comprises a microprocessor.
 13. A semiconductor device, comprising: a circuit including a programmable voltage divider having normal and test modes of operation, the divider comprising: first and second supply nodes; a divider node operable to provide a data value; a first divider element coupled between said first supply node and said divider node; a controlled node; a second divider element coupled between said divider node and said controlled node and having a programmable conductivity; and a variable impedance coupled between said controlled node and said second supply node, said variable impedance having a larger value during said test mode than during said normal mode.
 14. The semiconductor device of claim 13 wherein said variable impedance comprises: a first switch coupled between said controlled node and said second supply node; a series combination of a second switch and an impedance element, said series combination coupled in parallel with said first switch; and said variable impedance operable during said test mode to open said first switch and to close said second switch.
 15. The semiconductor device of claim 13 wherein said first and second divider elements are operable during said test mode to generate said data value having a first logic level when said second divider element has a conductivity that is greater than or equal to a selected minimum value and to generate said data value having a second logic level when said second divider element has a conductivity that is less than said selected minimum value.
 16. The semiconductor device of claim 13, further comprising programming circuitry that is coupled across said second divider element and that is operable to program said second divider element to have a first conductivity.
 17. The semiconductor device of claim 13 wherein said first divider element is a transistor.
 18. The semiconductor device of claim 13 wherein the semiconductor device comprises an electrically erasable and programmable read-only memory device.
 19. The semiconductor device of claim 13 wherein the semiconductor device comprises a dynamic random access memory device.
 20. The semiconductor device of claim 13 wherein the semiconductor device comprises a synchronous dynamic random access memory device.
 21. The semiconductor device of claim 13 wherein the semiconductor device comprises a microprocessor.
 22. A semiconductor device, comprising: a circuit for providing a programmable reference value, the circuit comprising: first and second supply terminals; a reference node that provides said reference value; a test node; a first impedance element having a first terminal coupled to said first supply terminal and having a second terminal coupled to said reference node; a selectively conductive element having a first terminal coupled to said reference node and having a second terminal coupled to said test node; a first switch coupled between said test node and said second supply terminal; a second switch having a first terminal coupled to said test node and having a second terminal; and a second impedance element coupled between said second terminal of said second switch and said second supply terminal.
 23. The semiconductor device of claim 22 wherein: said first impedance element comprises a transistor; and said second impedance element comprises a resistor.
 24. The semiconductor device of claim 22 wherein said selectively conductive element comprises an antifuse.
 25. The semiconductor device of claim 22, further comprising: said first and second switches each having a control terminal; and a control circuit that is coupled to said control terminals of said first and second switches.
 26. The semiconductor device of claim 22, further comprising an isolation device that is serially coupled between said reference node and said first terminal of said selectively conductive element.
 27. The semiconductor device of claim 22, further comprising: a decoder circuit coupled to said first terminal of said selectively conductive element; and a program-voltage generator coupled to said second terminal of said selectively conductive element.
 28. The semiconductor device of claim 22 wherein the semiconductor device comprises an electrically erasable and programmable read-only memory device.
 29. The semiconductor device of claim 22 wherein the semiconductor device comprises a dynamic random access memory device.
 30. The semiconductor device of claim 22 wherein the semiconductor device comprises a synchronous dynamic random access memory device.
 31. The semiconductor device of claim 22 wherein the semiconductor device comprises a microprocessor.
 32. A semiconductor device, comprising: a circuit for providing a selectable reference value, the circuit comprising: first and second supply terminals; a reference node that provides said reference value; a test node; an impedance element having a first terminal coupled to said first supply terminal and having a second terminal coupled to said reference node; an element having a programmable conductivity, said programmable element including a first terminal coupled to said reference node and having a second terminal coupled to said test node; a first switch coupled between said test node and said second supply terminal; and a voltage source coupled between said test node and said second supply terminal.
 33. The semiconductor device of claim 32, further comprising: a second switch having a first terminal coupled to said test node and having a second terminal; and said voltage source coupled between said second terminal of said second switch and said second supply terminal.
 34. The semiconductor device of claim 32 wherein said programmable element comprises a laser fuse.
 35. The semiconductor device of claim 32 wherein said programmable element comprises an electrical fuse.
 36. The semiconductor device of claim 32 wherein said voltage source has a positive terminal coupled to said second terminal of said second switch and has a negative terminal coupled to said second supply terminal.
 37. The semiconductor device of claim 32 wherein said voltage source has a negative terminal coupled to said second terminal of said second switch and has a positive terminal coupled to said second supply terminal.
 38. The semiconductor device of claim 32, further comprising a latch having an input terminal coupled to said reference node, said latch storing said reference value and providing said stored reference value on an output terminal.
 39. The semiconductor device of claim 32, further comprising: an initialization switch coupled between said first supply terminal and said first terminal of said impedance element; a latch switch coupled in parallel with said initialization switch, said latch switch having a control terminal; and an inverter coupled between said reference node and said control terminal of said latch switch.
 40. The semiconductor device of claim 32 wherein said voltage source comprises a transistor that is connected in a diode configuration.
 41. The semiconductor device of claim 32, further comprising an isolation transistor serially coupled between said reference node and said first terminal of said programmable element.
 42. The semiconductor device of claim 32 wherein the semiconductor device comprises an electrically erasable and programmable read-only memory device.
 43. The semiconductor device of claim 32 wherein the semiconductor device comprises a dynamic random access memory device.
 44. The semiconductor device of claim 32 wherein the semiconductor device comprises a synchronous dynamic random access memory device.
 45. The semiconductor device of claim 32 wherein the semiconductor device comprises a microprocessor. 